ترانزیستور روسی مدل КТ816Г

ترانزیستور روسی مدل KT816G

  Type Designator: KT816G
SMD Transistor Code: КТ816Г
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 60 pF