ترانزیستور 2N5415

ترانزیستور 2N5415

Type Designator: 2N5415

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 115 MHz

Collector Capacitance (Cc): 15 pF