ترانزیستور VHFمدل 2П901А روسی

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2P901A
2P901A silicon planar field-effect transistors with an insulated gate and an induced n-type generator channel.
Designed for use in amplifiers and generators in the range of short and ultrashort wavelengths.
Used to operate as part of special-purpose electronic equipment.
Available in a metal-ceramic case with rigid leads and a mounting screw.
They are marked with a alphanumeric code on the transistor body.
Transistor weight no more than 6.0 g.
Housing type: KT-4-2 (TO-60).
Transistors 2P901A-5, 2P901B-5 are produced in the form of crystals with contact pads without a crystal holder and without leads for use in hybrid integrated circuits.
The type of device is indicated on the label.
Crystal mass is not more than 0.00012 g.
Quality category: “VP”, “OS”.
Technical conditions:
– acceptance of “VP” ZhK3.365.243TU;
– acceptance of “OS” ZhK3.365.243TU, aA0.339.190TU.
Foreign analogue: VMP1, BFL522.

Guaranteed shelf life is 25 years from the date of manufacture.
Warranty operating time:
– 25,000 hours – in the modes and conditions allowed by the specifications;
– 50,000 hours – in light mode.
Warranty operating time is calculated within the warranty storage period.

Main technical characteristics of the 2P901A transistor:
• Transistor structure: with an insulated gate, with an induced n-channel;
• Rsi t max – Maximum drain-source power dissipation with heat sink: 20 W;
• Usi max – Maximum drain-source voltage: 70 V;
• Uзс max – Maximum gate-drain voltage: 85 V;
• Uzi max – Maximum gate-source voltage: 30 V;
• Iс – Drain current (constant): 4 A;
• Is start – Initial drain current: no more than 200 mA;
• Ic rest – Residual drain current: no more than 50 mA;
• S – Characteristic slope: 50… 160 mA/V (20V; 0.5A);
• C12i – Feedback capacitance in a circuit with a common source during a short circuit at the AC input: no more than 10 pF;
• K.r – Power gain: no less than 7 dB at a frequency of 100 MHz.

Explanation of the symbol for a special-purpose field-effect transistor:
2P901A
2 – number, designates the source material from which the transistor is made and its quality category, where 2 is a silicon transistor of the quality category “VP”, “OSM”, “OS”;
P is a letter defining a class or subgroup of semiconductor devices, where P is a field-effect transistor;
9 – a letter indicating the functional purpose, where 9 is a high-power transistor with a maximum power dissipation of more than 1.5 W and a cutoff frequency of the current transfer coefficient or a maximum recommended frequency of more than 300 MHz;
01 – a number indicating the serial number of the development of the field-effect transistor;
A is a letter that determines the classification of transistors according to parameters, manufactured using a single technological process.

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